TPC8115 データシートの表示（PDF） - Toshiba
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TPC8115 Datasheet PDF : 7 Pages
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TPC8115
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±10
μA
IDSS
VDS = −20 V, VGS = 0 V
⎯
⎯
−10
μA
V (BR) DSS
V (BR) DSX
ID = −10 mA, VGS = 0 V
ID = −10 mA, VGS = 8 V
−20 ⎯
⎯
V
−10 ⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
−0.5 ⎯
−1.2
V
VGS = −1.8 V, ID = −5.0 A
⎯
15
30
RDS (ON) VGS = −2.5 V, ID = −5.0 A
⎯
9.0
14
mΩ
VGS = −4.5 V, ID = −5.0 A
⎯
6.5
10
|Yfs|
VDS = −10 V, ID = −5.0 A
20
40
⎯
S
Ciss
⎯ 9130 ⎯
Crss
VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1020 ⎯
pF
Coss
⎯ 1110 ⎯
tr
0V
VGS
−5 V
ton
tf
ID = −5 A
⎯
14
⎯
VOUT
⎯
26
⎯
ns
⎯
228
⎯
VDD ≈ −10 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
666
⎯
Qg
Qgs1
Qgd
VDD ≈ −16 V, VGS = −5 V,
ID = −10 A
⎯
115
⎯
⎯
18
⎯
nC
⎯
34
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
IDRP
VDSF
⎯
IDR = −10 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯
−40
A
⎯
⎯
1.2
V
3
2009-03-16
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