TPS855 データシートの表示（PDF） - Toshiba

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TPS855

TOSHIBA Photo-IC Silicon Epitaxial Planar

Toshiba 

10

3

1

0.3

0.1

0.03

0.01

0.003

0.001

1

ICC – EV

(typ.)

Ta = 25°C

VCC = 5V

Using the A light source

Please refer to Figure 3.

RL = 250 Ω

RL = 1000 Ω

RL = 5000 Ω

10

100

1000

Illuminance EV (lx)

10000

Switching characteristics

(Non-saturating operation)

1000

300

Ta = 25°C

VCC = 5 V

VOUT = 2.5 V

Using the White LED

Please refer to Figure 5.

(typ.)

100

30

tf

td

10

tr

3

ts

1

0.3

0.1

0.1

0.3

1

3

10

Load resistance RL (kΩ)

TPS855(F)

Relative ICC – Ta

1.40

VCC = 5 V

Using the Fluorescent light 100lx

RL = 1 kΩ

Please refer to Figure 3.

1.20

(typ.)

1.00

0.80

0.60

−40 −20

0

20

60

80 100

Ambient temperature Ta (°C)

Switching characteristics

(saturating operation)

1000

300

Ta = 25°C

VCC = 5 V

VOUT >= 4 V

Using the White LED

Please refer to Figure 5.

(typ.)

100

tf

30

10

td

ts

3

tr

1

0.3

0.1

0.1

0.3

1

3

10

Load resistance RL (kΩ)

6

2007-10-01

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