MMBD717LT1(2001) データシートの表示（PDF） - ON Semiconductor

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MMBD717LT1
(Rev.:2001)

Common Anode Schottky Barrier Diodes

ON Semiconductor 

MMBD717LT1

820 Ω

+10 V

2k

100 µH IF

0.1 µF

0.1 µF

tr

tp

t

IF

10%

50 Ω OUTPUT

PULSE

GENERATOR

DUT

50 Ω INPUT

90%

SAMPLING

OSCILLOSCOPE VR

IR

INPUT SIGNAL

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

trr

t

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

10

1.0

1ā50°C

1ā25°C

85°C

25°C -ā40°C -ā55°C

0.1

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

VF, FORWARD VOLTAGE (VOLTS)

Figure 2. Typical Forward Voltage

100

TA = 150°C

10

125°C

1.0

85°C

0.1

0.01

25°C

0.001

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Reverse Current versus Reverse

Voltage

3.0

2.5

2.0

1.5

1.0

0.5

0

0 2.0 4.0 6.0 8.0 10 12 14 16 18

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Typical Capacitance

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