MJE243G(2006) データシートの表示（PDF） - ON Semiconductor
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MJE243G Datasheet PDF : 6 Pages
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MJE243 − NPN,
16
MJE253 − PNP
1.6
12
1.2
8.0
0.8
4.0
0.4
0
0
20
40
60
80
100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+30 V
+11 V
0
25 ms
−9.0 V
RB
51
RC
SCOPE
D1
tr, tf ≤ 10 ns
−4 V
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
Figure 2. Switching Time Test Circuit
1K
500
300
tr
200
100
50
30
20
10
td
5
3
NPN MJE243
2
PNP MJE253
VCC = 30 V
IC/IB = 10
TJ = 25°C
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.01
0.03
0.02 0 (SINGLE PULSE)
0.01
0.02
0.05
0.1
0.2
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
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