UAA3535HL データシートの表示（PDF） - Philips Electronics

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UAA3535HL

Fully integrated DECT transceiver

Philips Electronics 

Philips Semiconductors

Low power GSM/DCS/PCS multi-band transceiver

Objective specification

UAA3535HL

SYMBOL

PARAMETER

CONDITIONS

Ri(dif)

Ci(dif)

s11

PLO

differential input resistance

differential input capacitance

input reflection coefficient

power available from the

LO source

parallel RC input model

parallel RC input model

RF and IF synthesizers

REFERENCE INPUT; PIN REFIN

fref

reference frequency

REFDIV = 0

REFDIV = 1

Vi(rms)

input voltage level

(RMS value)

Ri

input resistance

fref = 13 MHz

RF SYNTHESIZER; PIN RFCPO

fRFLO

fcomp(RF)

fcomp(leak)

synthesizer frequency

comparison frequency

200 kHz comparison

frequency leakage

with recommended loop

filter

fstep(RF)

frequency step

programmability

fcomp(RF) = 200 kHz

Φnoise

SPURP(RF)

close-in phase noise

power level of spurious

signals

∆f = 2 kHz

f > 400 kHz

ICP(nom)

nominal charge pump output sink or source

current

KΦ

phase-frequency detector ICP = 2 mA

gain

∆KΦ

phase-frequency detector

gain variation

over VCP range

IL(CP)

VCP

Ro

charge pump leakage current in off state

charge pump output voltage

output resistance

ICP within specified range

SYN mode disabled;

power-down

MIN.

−

−

−

−8

−

−

60

−

1 700

−

−

−

−

−

1.7

−

−

−5

0.4

−

TYP.

50

0.2

−15

−5

13

26

−

10

−

200

−50

100

−80

−

2.0

0.32

−

−

−

1

MAX.

−

−

−10

−2

−

−

220

−

2 100

−

−

−

−76

−70

2.3

−

10

+5

VCC − 0.4

−

UNIT

Ω

pF

dB

dBm

MHz

MHz

mV

kΩ

MHz

kHz

dBc

kHz

dBc/Hz

dBc

mA

mA/rad

%

nA

V

kΩ

2000 Feb 17

16

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