DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 40
Pulsed
VGS = −10 V
−4.5 V
- 30
−4.0 V
- 20
- 10
0
0
- 0.2
- 0.4
- 0.6
- 0.8
-1
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
- 2.4
- 2.2
VDS = −10 V
ID = −1.0 mA
-2
- 1.8
- 1.6
- 1.4
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = −4.5 A
Pulsed
30
VGS = −4.0 V
−4.5 V
20
10
−10 V
0
-50
0
50
100
150
Tch - Channel Temperature - °C
µPA1830
FORWARD TRANSFER CHARACTERISTICS
- 100
- 10
VDS = −10 V
Pulsed
-1
- 0.1
- 0.01
TA = 125°C
75°C
25°C
−25°C
- 0.001
- 0.0001
-1
- 1.5
-2
- 2.5
-3
- 3.5
-4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
10
TA = −25°C
25°C
75°C
125°C
1
0.1
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
- 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
20
ID = −4.5 A
10
0
0
-5
- 10
- 15
- 20
VGS - Gate to Source Voltage - V
4
Data Sheet G16268EJ1V0DS