UPA1915 データシートの表示（PDF） - NEC => Renesas Technology

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UPA1915

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

µ PA1915

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = –20 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±12 V, VDS = 0 V

Gate to Source Cut-off Voltage

VGS(off) VDS = –10 V, ID = –1 mA

Forward Transfer Admittance

| yfs | VDS = –10 V, ID = –2.5 A

Drain to Source On-state Resistance

RDS(on)1 VGS = –4.5 V, ID = –2.5 A

RDS(on)2 VGS = –4.0 V, ID = –2.5 A

RDS(on)3 VGS = –2.7 V, ID = –2.5 A

5 Input Capacitance

RDS(on)4

Ciss

VGS = –2.5 V, ID = –2.5 A

VDS = –10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = –10 V

Rise Time

tr

ID = –2.5 A

Turn-off Delay Time

td(off)

VGS(on) = –4.0 V

Fall Time

tf

RG = 10 Ω

Total Gate Charge

QG

VDD = –16 V

Gate to Source Charge

QGS ID = –4.5 A

Gate to Drain Charge

QGD VGS = –4.0 V

Diode Forward Voltage

VF(S-D) IF = 4.5 A, VGS = 0 V

MIN. TYP. MAX. UNIT

–10 µA

±10 µA

–0.5 –1.1 –1.5 V

3 8.8

S

45 55 mΩ

47 58 mΩ

61 82 mΩ

67 90 mΩ

820

pF

210

pF

100

pF

16

ns

14

ns

58

ns

46

ns

5.0

nC

2.0

nC

2.5

nC

0.86

V

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

VGS (−)

0

τ

τ = 1µs

Duty Cycle ≤ 1 %

RL

VDD

VGS(−)

VGS

Wave Form

10 %

0

90 %

VGS(on)

VDS(−)

90 %

VDS

VDS

0

Wave Form

td(on)

10 % 10 %

tr td(off)

90 %

tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = −2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G14761EJ1V0DS00

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