µ PA1916
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = –12 V, VGS = 0 V
VGS = m8.0 V, VDS = 0 V
VDS = –10 V, ID = –1.0 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –2.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –2.5 A
RDS(on)2 VGS = –3.0 V, ID = –2.5 A
RDS(on)3 VGS = –2.5 V, ID = –2.5 A
RDS(on)4 VGS = –1.8 V, ID = –1.5 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on) VDD = –6.0 V, ID = –2.5 A
Rise Time
tr
VGS = –4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = –10 V
Gate to Source Charge
QGS VGS = –4.0 V
Gate to Drain Charge
QGD ID = –4.5 A
Diode Forward Voltage
VF(S-D) IF = 4.5 A, VGS = 0 V
MIN. TYP. MAX. UNIT
–10 µA
m10 µA
–0.45 –0.8 –1.5 V
3.0
S
30 39 mΩ
36 49 mΩ
41 55 mΩ
59 98 mΩ
950
pF
330
pF
170
pF
15
ns
15
ns
140
ns
120
ns
8.0
nC
1.5
nC
2.5
nC
0.84
V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10 %
0
90 %
VGS
VDS(−)
90 %
VDS
VDS
0
Wave Form
td(on)
10 % 10 %
tr td(off)
90 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G15635EJ1V0DS