10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
Ciss
Coss
Crss
10
−0.1
−1.0
−10
VDS - Drain to Source Voltage - V
−100
µ PA1916
1000
SWITCHING CHARACTERISTICS
td(off)
100 tf
td(on)
10
tr
1
−0.1
VDD = −6.0 V
VGS = −4.0 V
RG = 10 Ω
−1
−10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
VSD - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−5
ID = −4.5 A
−4
VDD = −10 V
−6.0 V
−3
−2
−1
00
2
4
6
8
10
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Without board
100
Mounted on 250mm2 × 35 µm copper pad
connected to drain electrode in
50mm × 50mm×1.6mm FR-4 board
10
1
0.001
0.01
0.1
1
10
PW - Pulse Width - s
100
1000
Data Sheet G15635EJ1V0DS
5