UPD43256B-X データシートの表示（PDF） - NEC => Renesas Technology

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UPD43256B-X

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

NEC => Renesas Technology 

Low VCC Data Retention Characteristics (TA = −25 to +85 °C)

Parameter

Symbol

Test Condition

Data retention supply voltage

VCCDR /CS ≥ VCC − 0.2 V

Data retention supply current

ICCDR VCC = 3.0 V, /CS ≥ VCC − 0.2 V

Chip deselection to data retention mode

tCDR

Operation recovery time

tR

Note 2 μA (TA ≤ 40 °C), 7 μA (TA ≤ 70 °C)

Data Retention Timing Chart

VCC

4.5 VNote

tCDR

Data retention mode

μPD43256B-X

MIN. TYP. MAX. Unit

2.0

5.5

V

0.5

20 Note

μA

0

ns

5

ms

tR

VIH (MIN.)

VCCDR (MIN.)

VIL (MAX.)

GND

/CS

/CS ≥ VCC – 0.2 V

Note A version : 3.0 V, B version : 2.7 V

Remark The other pins (Address, /OE, /WE, I/O) can be in high impedance state.

14

Data Sheet M11012EJ6V0DS

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