W6NXD3L-0000 データシートの表示（PDF） - Cree, Inc

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W6NXD3L-0000

Silicon Carbide Substrates

Cree, Inc 

Page 2 • Effective December 1998 • Revised March 2003

Properties and Specifications for

Silicon Carbide

Applications: • High Frequency Power Devices

• High Power Devices

• High Temperature Devices

• Optoelectronic Devices

• III-V Nitride Deposition

Physical Properties

Polytype

Single Crystal 4H

Single Crystal 6H

Crystal Structure

Hexagonal

Hexagonal

Bandgap

Thermal Conductivity

(Typical Range)

Lattice Parameters

Mohs Hardness

3.26 eV

3.03 eV

3.0-3.8 W/cm • K @ 298K

(2.3-2.8 W/cm • K @ 373K)

3.0-3.8 W/cm • K @ 298K

(2.3-2.8 W/cm • K @ 373K)

a=3.073 Å

c=10.053Å

a=3.081 Å

c=15.117Å

~9

~9

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