W6NXD3K-0000 データシートの表示（PDF） - Cree, Inc

部品番号

コンポーネント説明

メーカー

W6NXD3K-0000

Silicon Carbide Substrates

Cree, Inc 

Page 8 • Effective December 1998 • Revised March 2003

Standard Specifications

50.8mm Diameter Substrate Specifications

SUBSTRATE PROPERTY

Diameter

Thickness, Centerpoint

4H and 6H On-Axis

4H and 6H Off-Axis; Semi-Insulating

Dopant

Primary Flat Length

Secondary Flat Length

Cleaved Flat Length (laser substrate only)

Surface Orientation

6H and 4H On-Axis

6H Off-Axis

4H Off-Axis

Surface Treatment

Orthogonal Misorientation

Primary Flat Orientation

Secondary Flat Orientation

Carbon Face

Silicon Face

Cleaved Flat Orientation (laser substrate only)

Package

CREE STANDARD

2.000" ± 0.015"

50.8mm ± 0.38mm

Standard

0.010" ± 0.001"

254.0µm ± 25.4µm

0.0145" ± 0.0025"

368.0µm ± 64.0µm

n-type: Nitrogen

p-type: Aluminum

0.625" ± 0.065"

15.88mm ± 1.65mm

0.315" ± 0.065"

8.0mm ± 1.65mm

Nominal 0.4" (10mm)

Laser (6H only)

0.0055" ± 0.0015"

140.0µm ± 38.0µm

{0001} ± 0.5°

3.5° toward <1120> ± 0.5°

8.0° toward <1120> ± 0.5°

Silicon face polish unless otherwise specified

± 5°

<1120> ± 5°

90° CCW from Primary ± 5°

90° CW from Primary ± 5°

180° from primary flat is {1010} face

FLUOROWARE® Single Wafer Container

Share Link: