YG912S6R データシートの表示（PDF） - Fuji Electric
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YG912S6R Datasheet PDF : 14 Pages
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Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=3.3Ω, Rgoff=0.82Ω, Tj= １25°C
1.8
1.6
1.4
1.2
1.0 ton
0.8 toff
0.6
0.4 tr
0.2 tf
0.0
0
400
800
1200
1600
Collector current : Ic [ A ]
2000
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=3.3Ω, Rgoff=0.82Ω, Tj= １25°C
500
450
Eoff
400
350
300
250
Eon
200
150
Err
100
50
0
0
400
800
1200
1600
2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
Tentative
(Under developmemt)
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= １25°C
6.0
ton
5.0
4.0
3.0
tr
2.0
toff
1.0
tf
0.0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= １25°C
1000
900
Eon
800
700
600
500
Eoff
400
300
200
100
Err
0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
2800
2400
2000
1600
1200
800
400
0
0
Reverse bias safe operating area (max.)
±VGE=15V ,Tj = 125°C / chip
200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
MT5F16507
10 14
H04-004-003
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