SI4311-B12 データシートの表示（PDF） - Silicon Laboratories
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SI4311-B12 Datasheet PDF : 20 Pages
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Si4311-B12/B21
Table 4. Si4311 Receiver Characteristics (Continued)
(TA = 25 °C, VDD = 3.3 V, Rs = 50 Ω, FRF = 433.92 MHz unless otherwise noted)
Parameter
Input IP33
FSK Deviation Input Range3
LNA Input Capacitance3
RX Boot Time3
Symbol
Test Condition
Min Typ Max Unit
| f2 – f1 | = 5 MHz, high gain mode,
desired signal is 3 dB above sensitivity,
CW interference levels are increased
—
–10
— dBm
until BER = 10–3
10 — 90 kHz
—7
— pF
From reset
— 320 — ms
Notes:
1. 1.0 kbps, f = 50 kHz, xtal = ±20 ppm, AFC = 0, BT[1:0] = 00, DEV[1:0] = 01.
2. Guaranteed by characterization.
3. Guaranteed by design.
Table 5. Crystal Characteristics
(VDD = 3.3 V, TA = 25 °C)
Parameter
Crystal Oscillator Frequency
Crystal ESR
XTL1, XTL2 Input Capacitance
Symbol Test Condition
Min
Typ
Max
Unit
—
16
—
MHz
—
—
100
—
11
—
pF
Table 6. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
Supply Voltage
Input Current3
Input Voltage3
Operating Temperature
Storage Temperature
RF Input Level4
VDD
–0.5 to 3.9
V
IIN
10
mA
VIN
–0.3 to (VDD + 0.3)
V
TOP
–45 to 95
C
TSTG
–55 to 150
C
0.4
VPK
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. The Si4311 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
3. For input pins 315/434, AFC, BT[1:0], and DEV[1:0].
4. At RF input pin RX_IN.
6
Rev. 1.0
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