2SA1943 データシートの表示（PDF） - Toshiba

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2SA1943

Silicon PNP Triple Diffused Type Transistor

Toshiba 

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1943

Power Amplifier Applications

2SA1943

Unit: mm

• High collector voltage: VCEO = −230 V (min)

• Complementary to 2SC5200

• Recommended for 100-W high-fidelity audio frequency amplifier

output stage.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

−230

V

Collector-emitter voltage

VCEO

−230

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−15

A

Base current

IB

−1.5

A

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

PC

150

W

Tj

150

°C

Tstg

−55 to 150

°C

JEDEC

JEITA

TOSHIBA

―

―

2-21F1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 9.75 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

1

2006-11-09

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