2SD2114KT146W データシートの表示（PDF） - ROHM Semiconductor

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2SD2114KT146W

High-current Gain Medium Power Transistor (20V, 0.5A)

ROHM Semiconductor 

High-current Gain Medium Power Transistor (20V, 0.5A)

2SD2114K

Features

1) High DC current gain.

hFE = 1200 (Typ.)

2) High emitter-base voltage.

VEBO =12V (Min.)

3) Low VCE (sat).

VCE (sat) = 0.18V (Typ.)

(IC / IB = 500mA / 20mA)

Structure

Epitaxial planar type

NPN silicon transistor

Dimensions (Unit : mm)

2SD2114K

2.9±0.2

1.9±0.2

0.95 0.95

(1)

(2)

1.1+−00..21

0.8±0.1

0∼0.1

ROHM : SMT3

EIAJ : SC-59

(3)

0.4

+0.1

−0.05

0.15−+00..016

All terminals have same dimensions

∗ Abbreviated symbol: BB

∗ Denotes hFE

(1) Emitter

(2) Base

(3) Collector

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Collector-base voltage

VCBO

25

Collector-emitter voltage

VCEO

20

Emitter-base voltage

VEBO

12

Collector current

0.5

IC

1

Collector power dissipation

PC

0.2

Junction temperature

Tj

150

Storage temperature

∗ Single pulse Pw=100ms

Tstg

−55 to +150

Unit

V

V

V

A(DC)

A(Pulse) ∗

W

°C

°C

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Collector-base breakdown voltage

BVCBO 25

Collector-emitter breakdown voltage BVCEO 20

Emitter-base breakdown voltage

BVEBO 12

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage

VCE(sat)

−

DC current transfer ratio

Transition frequency

Output capacitance

hFE

820

fT∗

−

Cob

−

Output On-resistance

∗ Measured using pulse current

Ron

−

Typ.

−

−

−

−

−

0.18

−

350

8.0

0.8

Max.

−

−

−

0.5

0.5

0.4

2700

−

−

−

Unit

V

V

V

μA

μA

V

−

MHz

pF

Ω

Conditions

IC=10μA

IC=1mA

IE=10μA

VCB=20V

VEB=10V

IC/IB=500mA/20mA

VCE=3V, IC=10mA

VCE=10V, IE= −50mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

IB=1mA, Vi=100mV(rms), f=1kHz

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○c 2012 ROHM Co., Ltd. All rights reserved.

2012.01 - Rev.C

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