NTZD3155C(2007) データシートの表示（PDF） - ON Semiconductor
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NTZD3155C Datasheet PDF : 8 Pages
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NTZD3155C
Thermal Resistance Ratings
Parameter
Symbol
Max
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t = 5 s (Note 2)
RqJA
500
447
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol N/P
Test Condition
Min
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V(BR)DSS
N
P
Drain-to-Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
VGS = 0 V
ID = 250 mA 20
ID = -250 mA -20
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
IGSS
N VGS = 0 V, VDS = 16 V
TJ = 25°C
P VGS = 0 V, VDS= -16 V
N VGS = 0 V, VDS = 16 V TJ = 125°C
P VGS = 0 V, VDS= - 16V
P
VDS = 0 V, VGS = ±4.5 V
N
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
VGS(TH)
N
P
VGS(TH)/TJ
VGS = VDS
ID = 250 mA 0.45
ID = -250 mA -0.45
Drain-to-Source On Resistance
RDS(on)
N
P
N
P
N
P
Forward Transconductance
gFS
N
P
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 4.5 V, ID = 540 mA
VGS = -4.5V , ID = -430 mA
VGS = 2.5 V, ID = 500 mA
VGS = -2.5V , ID = -300 mA
VGS = 1.8 V, ID = 350 mA
VGS = -1.8V , ID = -150 mA
VDS = 10 V, ID = 540 mA
VDS = -10 V, ID = -430 mA
Input Capacitance
CISS
Output Capacitance
COSS
N
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
P
Reverse Transfer Capacitance
CRSS
3. Pulse Test: pulse width v300 ms, duty cycle v2%
f = 1 MHz, VGS = 0 V
VDS = 16 V
f = 1 MHz, VGS = 0 V
VDS = -16 V
Typ Max Unit
V
18
mV/°C
1.0 mA
-1.0
2.0
mA
-5.0
$2.0 mA
$5.0
1.0
V
-1.0
-1.9
-mV/ °C
0.4 0.55
0.5 0.9
0.5 0.7
W
0.6 1.2
0.7 0.9
1.0 2.0
1.0
S
1.0
80 150
13 25
10 20
pF
105 175
15 30
10 20
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