NTZD3155C(2007) データシートの表示（PDF） - ON Semiconductor

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NTZD3155C
(Rev.:2007)

Small Signal MOSFET

ON Semiconductor 

NTZD3155C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol N/P

Test Condition

Min Typ Max Unit

CHARGES, CAPACITANCES AND GATE RESISTANCE

Total Gate Charge

QG(TOT)

Threshold Gate Charge

QG(TH)

N

Gate-to-Source Charge

QGS

Gate-to-Drain Charge

QGD

Total Gate Charge

QG(TOT)

Threshold Gate Charge

Gate-to-Source Charge

QG(TH)

P

QGS

Gate-to-Drain Charge

QGD

SWITCHING CHARACTERISTICS (VGS = V) (Note 4)

Turn-On Delay Time

td(ON)

N

Rise Time

tr

Turn-Of f Delay Time

td(OFF)

Fall Time

tf

Turn-On Delay Time

td(ON)

P

Rise Time

tr

Turn-Of f Delay Time

td(OFF)

Fall Time

tf

Drain-Source Diode Characteristics

VGS = 4.5 V, VDS = -10 V; ID = 540 mA

VGS = -4.5 V, VDS = 10 V; ID = -380 mA

VGS = 4.5 V, VDD = -10 V, ID = 540 mA,

RG = 10 W

VGS = -4.5 V, VDD = 10 V, ID = -215 mA,

RG = 10 W

1.5 2.5

0.1

0.2

0.35

nC

1.7 2.5

0.1

0.3

0.4

6.0

4.0

16

8.0

ns

10

12

35

19

Forward Diode Voltage

VSD

N

P

VGS = 0 V, TJ = 25°C

Reverse Recovery Time

tRR

N

VGS = 0 V,

dIS/dt = 100 A/ms

P

4. Switching characteristics are independent of operating junction temperatures

IS = 350 mA

IS = -350 mA

IS = 350 mA

IS = -350 mA

0.7 1.2

V

-0.8 -1.2

6.5

ns

13

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