NTZD3155C(2007) データシートの表示（PDF） - ON Semiconductor

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NTZD3155C
(Rev.:2007)

Small Signal MOSFET

ON Semiconductor 

NTZD3155C

N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

1.2

5.5 V

1.0

1.8 V

TJ = 25°C

0.8

VGS = 1.6 V

VGS = 2.0 V to 2.2 V

0.6

VGS = 1.4 V

0.4

1.8

1.6 VDS w 10 V

TJ = -55°C

1.4

1.2

1.0

0.8

0.6

TJ = 100°C

0.2

VGS = 1.2 V

VGS = 1.0 V

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

0.4

0.2

0

0.5

TJ = 25°C

1.0

1.5

2.0

2.5

3.0

VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.0

0.9

ID = 0.54 A

TJ = 25°C

0.9

TJ = 25°C

0.8

0.8

VGS = 1.8 V

0.7

0.7

0.6

0.6

0.5

VGS = 2.5 V

0.5

0.4

0.4

VGS = 4.5 V

0.3

0.3

1

2

3

4

5

6

0.2

0.4

0.6

0.8

1

1.2

VGS, GATE-T O-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 3. On-Resistance versus

Gate-to-Source Voltage

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

2

1000

VGS = 0 V

1.8

ID = 0.54 A

VGS = 4.5 V

TJ = 150°C

1.6

1.4

100

1.2

1

0.8

TJ = 100°C

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

10

2 4 6 8 10 12 14 16 18 20

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 6. Drain-to-Source Leakage Current

versus Voltage

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