BC857W-G データシートの表示（PDF） - ComChip
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BC857W-G Datasheet PDF : 6 Pages
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Small Signal Transistor
BC856AW-G Thru. BC858CW-G (PNP)
RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
-Power dissipation
PCM: 0.15W (@TA=25°C)
-Collector current
ICM: -0.1A
-Collector-base voltage
VCBO: BC856W= -80V
BC857W= -50V
BC858W= -30V
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150°C
SOT-323
0.053(1.35)
0.045(1.15)
0.039 (1.00)
0.035 (0.90)
0.087 (2.20)
0.079 (2.00)
3
1
2
0.055 (1.40)
0.047 (1.20)
0.006 (0.15)
0.003 (0.08)
0.096 (2.45)
0.085 (2.15)
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
0.016 (0.40)
0.008 (0.20)
0.004 (0.10) max
0.018 (0.46)
0.010 (0.26)
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
1
2
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Value
Units
BC856W-G
-80
Collector-Base Voltage
BC857W-G
VCBO
-50
V
BC858W-G
-30
BC856W-G
-65
Collector-Emitter Voltage
BC857W-G
VCEO
-45
V
BC858W-G
-30
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-0.1
A
Collector Power Dissipation
PC
150
mW
Junction Temperature
Storage Temperature Range
TJ
150
O
C
TSTG
-65 to +150
O
C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR36
Comchip Technology CO., LTD.
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