BC868-16 データシートの表示（PDF） - Diodes Incorporated.
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BC868-16 Datasheet PDF : 1 Pages
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PART OBSOLETE - USE BCW66H / BCX6825
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - OCTOBER 1995 7
FEATURES
* SUITABLE FOR GENERAL AF APPLICATIONS AND
CLASS B AUDIO OUTPUT STAGES UPTO 3W
* HIGH hFE AND LOW SATURATION VOLTAGE
BC868
C
COMPLEMENTARY TYPE - BC869
PARTMARKING DETAILS–
BC868 - CAC
BC868-16 - CCC
BC868-25 - CDC
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
25
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
20
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
ICBO
IEBO
VCE(sat)
VBE(on)
10
1
µA
mA
VCB
VCB
=
=
25V
25V,Tamb
=150oC
10
µA
VEB=5V
0.5
V
IC=1A, IB=100mA*
1.0
V
IC=1A, VCE=1V*
Static Forward Current
Transfer Ratio
hFE
50
85
60
BC868-16 100
BC868-25 160
Transition Frequency
fT
60
375
250
375
MHz
Output Capacitance
Cobo
45
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
IC=5mA, VCE=10V*
IC=500mA, VCE=1V*
IC=1A, VCE=1V*
IC=500mA, VCE=1V*
IC=500mA, VCE=1V*
IC=10mA, VCE=5V
f = 35MHz
VCB=10V, f=1MHz
3 - 11
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