BCX42E6433 データシートの表示（PDF） - Infineon Technologies

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BCX42E6433

PNP Silicon AF and Switching Transistor

Infineon Technologies 

BCX42

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO 125

-

-

IC = 10 mA, IB = 0

Collector-base breakdown voltage

V(BR)CBO 125

-

-

IC = 100 µA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO 5

-

-

IE = 10 µA, IC = 0

Collector-base cutoff current

ICBO

VCB = 100 V, IE = 0

-

-

0.1

VCB = 100 V, IE = 0 , TA = 150 °C

-

-

20

Unit

V

µA

Collector-emitter cutoff current

VCE = 100 V, TA = 85 °C

VCE = 100 V, TA = 125 °C

Emitter-base cutoff current

VEB = 4 V, IC = 0

DC current gain1)

IC = 100 µA, VCE = 1 V

IC = 100 mA, VCE = 1 V

IC = 200 mA, VCE = 1 V

Collector-emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

Base emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

ICEO

IEBO

-

-

10

-

-

75

-

- 100 nA

hFE

-

25

-

-

63

-

-

40

-

-

VCEsat

-

-

0.9 V

VBEsat

-

-

1.4

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

fT

- 150 - MHz

Ccb

-

12

- pF

1Pulse test: t < 300µs; D < 2%

2

2011-10-04

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