FDG6322C(1998) データシートの表示（PDF） - Fairchild Semiconductor

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FDG6322C
(Rev.:1998)

Dual N & P Channel Digital FET

Fairchild Semiconductor 

Typical Electrical Characteristics: N-Channel

0.5

VGS =4.5V

3.5V

0.4

3.0V

0.3

0.2

0.1

0

0

1

2

3

4

5

VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

4.5

VGS = 2.5V

4

2.7V

3.0V

3.5V

3

4.0V

4.5V

5.0V

2.5

0

0.1

0.3

0.4

I D , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = 0.22A

1.6

V GS = 4.5V

1.4

1.2

1

0.8

0.6

-50 -25

0

25

50

75 100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

with Temperature.

0.2

VDS = 5V

0.15

TJ = -55°C

25°C

125°C

0.1

0.05

0

0.5

1

1.5

2

2.5

3

VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

20

ID = 0.10A

16

12

8

TA =125°C

4

25°C

0

1

2

3

4

5

VGS ,GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

V = 0V

0.1

0.01

J

-55°C

0.0001

0

0.2

0.6

0.8

1.2

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6

Voltage

tion with Source Current

and Temperature.

FDG6322C Rev.F

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