FDZ2551N データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FDZ2551N Datasheet PDF : 4 Pages
| |||
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
20
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA,Referenced to 25°C
===∆TJ
Coefficient
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
IGSSF
Gate–Body Leakage Current,
Forward
VGS = 12 V, VDS = 0 V
IGSSR
Gate–Body Leakage Current,
Reverse
VGS = –12 V VDS = 0 V
V
14
mV/°C
1
µA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 9 A
VGS = 2.5 V, ID = 7 A
0.4 0.9 1.5
V
0.018 Ω
0.030
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.5 A (Note 2)
Voltage
2.5
A
0.77 1.2
V
Notes:
1. RθJA is a function of the junction-to-case (RθJC), case-to-ambient (RθCA ) and the PC Board (RθBA ) thermal resistance. For the purpose of determining RθJC
the case thermal reference is defined as the top surface of the package. RθJC is guaranteed by design while RθCA and RθBA are determined by the user's
design. Maximum current ratings assume single device operation.
(a). RθJA = 50°C/W (steady-state) when mounted on 1 in2 of 2 oz. copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ2551N Rev A(W)
Share Link: 