TGF2021-01 データシートの表示（PDF） - TriQuint Semiconductor
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TGF2021-01 Datasheet PDF : 8 Pages
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Advance Product Information
June 8, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(TA = 25 °C, Nominal)
TGF2021-01
SYMBOL
Power Tuned:
PARAMETER
Vd = 10V
Idq = 75mA
Vd = 12V
Idq = 75mA
UNITS
Psat
Saturated Output Power
30.8
31.5
dBm
PAE
Power Added Efficiency
50
48
%
Gain
Power Gain
11
11
dB
Rp 2/
Cp 2/
Parallel Resistance
Parallel Capacitance
26.6
0.464
31.9
Ω
0.496
pF
ΓL 3/
Load Reflection coefficient
0.527 ∠ 148.0
0.539 ∠ 141.0
-
Efficiency Tuned:
Psat
Saturated Output Power
30
30.7
dBm
PAE
Power Added Efficiency
59
55
%
Gain
Power Gain
11.5
11
dB
Rp 2/
Cp 2/
Parallel Resistance
Parallel Capacitance
49.0
0.539
55.6
Ω
0.505
pF
ΓL 3/
Load Reflection coefficient
0.642 ∠ 130.6
0.643 ∠ 126.3
-
1/ Values in this table are taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
θJC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) Idq = 75 mA
Pdiss = 0.9 W
TCH
(oC)
148
TJC
TM
(qC/W) (HRS)
86.5 1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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