TGF2021-04 データシートの表示（PDF） - TriQuint Semiconductor
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TGF2021-04 Datasheet PDF : 8 Pages
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Advance Product Information
September 19, 2005
TABLE I
MAXIMUM RATINGS
TGF2021-04
Symbol
Parameter 1/
V+
Positive Supply Voltage
V-
Negative Supply Voltage Range
I+
Positive Supply Current
| IG | Gate Supply Current
PIN Input Continuous Wave Power
PD Power Dissipation
TCH Operating Channel Temperature
TM Mounting Temperature (30 Seconds)
TSTG Storage Temperature
Value
12.5 V
-5V to 0V
1.8 A
28 mA
31 dBm
See note 3
150 °C
320 °C
-65 to 150 °C
Notes
2/
2/
2/
2/ 3/
4/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 21.7 (°C/W)
4/ Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 qC, Nominal)
Symbol
Parameter
Idss Saturated Drain Current
Gm
Transconductance
VP
VBGS
VBGD
Pinch-off Voltage
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
Minimum
-
-
-1.5
-30
-30
Typical
1200
1500
-1
-
-
Maximum Unit
-
mA
-
mS
-0.5
V
-14
V
-14
V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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