TGF2021-04 データシートの表示（PDF） - TriQuint Semiconductor
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TGF2021-04 Datasheet PDF : 8 Pages
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TABLE III
RF CHARACTERIZATION TABLE 1/
September 19, 2005
TGF2021-04
(TA = 25 °C, Nominal)
SYMBOL
Power Tuned:
PARAMETER
Vd = 10V
Idq = 300mA
Vd = 12V
Idq = 300mA
UNITS
Psat
Saturated Output Power
36.8
37.5
dBm
PAE
Power Added Efficiency
50
48
%
Gain
Power Gain
11
11
dB
Rp 2/
Cp 2/
Parallel Resistance
Parallel Capacitance
6.65
1.855
7.99
Ω
1.907
pF
ΓL 3/, 4/
Load Reflection coefficient
0.847 ∠ 172.6
0.847 ∠ 170.8
-
Efficiency Tuned:
Psat
Saturated Output Power
36
36.7
dBm
PAE
Power Added Efficiency
59
55
%
Gain
Power Gain
11.5
11
dB
Rp 2/
Parallel Resistance
12.25
13.90
Ω
Cp 2/
Parallel Capacitance
2.154
2.021
pF
ΓL 3/, 4/
Load Reflection coefficient
0.879 ∠ 167.6
0.885 ∠ 166.3
-
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
θJC Thermal Resistance
(channel to backside of carrier)
Test Conditions
Vd = 12 V
Idq = 300 mA
Pdiss = 3.6 W
TCH
TJC
TM
(oC) (qC/W) (HRS)
148
21.7 1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrie
at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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