10BQ015TR データシートの表示（PDF） - Vishay Semiconductors

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10BQ015TR

Schottky Rectifier, 1.0 A

Vishay Semiconductors 

10BQ015PbF

Vishay High Power Products Schottky Rectifier, 1.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

IRM (1)

Threshold voltage

Forward slope resistance

Typical junction capacitance

Typical series inductance

Maximum voltage rate of change

VF(TO)

rt

CT

LS

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

1A

2A

1A

2A

TJ = 25 °C

TJ = 100 °C

TEST CONDITIONS

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

TJ = TJ maximum

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.35

0.44

0.32

0.40

0.5

12

-

-

390

2.0

10 000

UNITS

V

mA

V

mΩ

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum junction temperature range

Maximum storage temperature range

Maximum thermal resistance,

junction to lead

TJ (1)

TStg

RthJL (2)

DC operation

See fig. 4

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

TEST CONDITIONS

Approximate weight

Marking device

Case style SMB (similar to DO-214AA)

Notes

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

(2) Mounted 1" square PCB

VALUES

- 55 to 125

- 55 to 150

UNITS

°C

36

°C/W

80

0.10

g

0.003

oz.

V1C

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94110

Revision: 04-Nov-08

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