1N5391-E3 データシートの表示（PDF） - Vishay Semiconductors
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1N5391-E3 Datasheet PDF : 4 Pages
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1N5391 thru 1N5399
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNIT
Maximum
instantaneous 1.5 A TA = 70 °C
VF
forward voltage
Maximum
DC reverse
current at rated
DC blocking
voltage
TA = 25 °C
IR
TA = 150 °C
Typical reverse IF = 0.5 A, IR = 1.0 A,
recovery time Irr = 0.25 A
trr
Typical junction
capacitance
4.0 V, 1 MHz
CJ
1.4
V
5.0
μA
300
2.0
μs
15
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNIT
Typical thermal resistance
RθJA (1)
RθJL (1)
55
°C/W
25
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
1N5391-E3/54
0.336
54
1N5391-E3/73
0.336
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.0
1.5
1.0
0.5
0
0
25
50
75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
50
TA = 75 °C
8.3 ms Single Half Sine-Wave
40
30
20
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
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2
For technical questions within your region, please contact one of the following: Document Number: 88514
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-Nov-09
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