1N5985B データシートの表示（PDF） - Fairchild Semiconductor
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1N5985B Datasheet PDF : 5 Pages
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Electrical Characteristics (Continued) TA=25°C unless otherwise noted
Device
1N6015B
1N6016B
1N6017B
1N6018B
1N6019B
VZ (V) @ IZ (Note 1)
Min.
Typ.
Max.
40.85
43
45.15
44.65
47
49.35
48.45
51
53.55
53.2
56
58.8
58.9
62
65.1
Test Current
IZ (mA)
2
2
2
2
2
Zener Impedance
ZZ @ IZ
(Ω)
ZZK @ IZK = 250µA
(Ω)
150
900
170
1000
180
1300
200
1400
225
1400
1N6020B 64.6
68
71.4
2
240
1N6021B 71.25
75
78.75
2
265
1N6022B 77.9
82
86.1
2
280
1N6023B 86.45
91
95.55
2
300
1N6024B
95
100
105
1
500
1600
1700
2000
2300
2600
1N6025B 104.5
110
115.5
1
650
3000
VF Forward Voltage = 1.2V Max @ IF = 200mA
leakage Current
IR
VR
(mA)
(V)
0.1
33
0.1
36
0.1
39
0.1
43
0.1
47
0.1
52
0.1
56
0.1
62
0.1
69
0.1
76
0.1
84
IZM (mA)
(Note 2)
12
11
9.8
8.9
8
7.4
6.7
6.1
5.5
5
4.5
Notes:
1. Zener Voltage (VZ)
The zener voltage is measured with the device junction in the themal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length.
2. Maximum Zener Current Ratings (IZM)
The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operation point and the power derating curve.
©2004 Fairchild Semiconductor Corporation
1N5985B - 1N6025B, Rev. C
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