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IXGH12N100AU1 データシートの表示(PDF) - IXYS CORPORATION
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IXGH12N100AU1
Low VCE(sat)IGBT with Diode High Speed IGBT with Diode
IXYS CORPORATION
IXGH12N100AU1 Datasheet PDF : 5 Pages
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IXGH12N100U1
IXGH12N100AU1
1200
5
T
J
= 125°C
R
G
= 120
1100
4
1000
t
fi
3
900
E
(OFF)
2
800
0
1
5
10
15
20
I
C
- Amperes
Figure 7. Dependence of tfi and E
OFF
on I
C
.
15
I
C
= 30A
V
CE
= 150V
12
9
6
3
0
0
15
30
45
60
75
Q
g
- nanocoulombs
Figure 9. Gate Charge
1
D=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
Single pulse
D = Duty Cycle
1000
800
5
T
J
= 125°C
t
fi
I
C
= 12A
4
600
3
400
2
E
(OFF)
200
1
0
0
0
30
60
90
120 150
R
G
- Ohms
Figure 8. Dependence of tfi and E
OFF
on R
G
.
100
24
10
T
J
= 125°C
R
G
= 4.7
dV/dt < 5V/ns
1
0.1
0
200 400 600 800 1000
V
CE
- Volts
Figure 10. Turn-off Safe Operating Area
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4-5
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