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2N2102 データシートの表示(PDF) - Comset Semiconductors
部品番号
コンポーネント説明
メーカー
2N2102
MEDIUM POWER AMPLIFIER & SWITCH
Comset Semiconductors
2N2102 Datasheet PDF : 3 Pages
1
2
3
NPN 2N2102
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I
CBO
I
EBO
V
CBO
Collector Cutoff Current
V
CB
= 60 V
I
E
= 0
T
amb
= 25°C
-
-
T
amb
= 150°C -
-
Emitter Cutoff Current V
EB
= 5 V, I
C
= 0
-
-
Collector Base
Sustaining Voltage
I
C
= 100 µA, I
E
= 0
120 -
2 nA
2 µA
5 nA
-
V
V
CEO
Collector Emitter
Sustaining Voltage (*)
I
C
= 30 mA, I
B
= 0
65 -
-
V
h
FE
DC Current Gain (*)
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 10 µA, V
CE
= 10 V
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 10 V
I
C
= 150 mA, I
B
= 15 mA
10 -
-
20 -
-
35
40
-
-
120
-
25 -
-
10 -
-
-
- 0.5 V
V
BE(SAT)
Base-Emitter saturation
Voltage (*)
I
C
= 150 mA, I
B
= 15 mA
-
- 1.1 V
C
C
Collector Capacitance
I
E
= 0 ,V
CB
= 10 V
f = 1MHz
-
- 15 pF
C
e
emitter Capacitance
I
C
= 0 ,V
EB
= 0.5 V
f = 1MHz
-
- 80 pF
(*) Pulse conditions : tp < 300
µ
s,
δ
=2%.
2|3
24/09/2012
COMSET SEMICONDUCTORS
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