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2N6659 データシートの表示(PDF) - Semelab - > TT Electronics plc

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2N6659
Semelab
Semelab - > TT Electronics plc  Semelab
2N6659 Datasheet PDF : 2 Pages
1 2
2N6659
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
V(BR)DSS Gate – Source Breakdown Voltage
VGS = 0V
ID = 10mA
35
VGS(th) Gate Threshold Voltage
VDS = VGS ID = 1mA
0.8
IGSS
Gate – Body Leakage Current
VGS = ±15V
VDS = 0V
TCASE = 125°C
VDS = 90V VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 72V VGS = 0V
TCASE = 125°C
ID(on)* On–State Drain Current
VDS = 15V VGS = 10V
1.5
VGS = 5V
ID = 0.3A
RDS(on)* Drain – Source On Resistance
VGS = 10V
ID = 1A
TCASE = 125°C
VGS = 5V
ID = 0.3A
VDS(on)* Drain – Source On Voltage
VGS = 10V
ID = 1A
TCASE = 125°C
gFS*
Forward Transconductance
VDS = 10V ID = 0.5A
170
gOS*
Common Source Output Conductance VDS = 10V ID = 0.1A
DYNAMIC CHARACTERISTICS
Small Signal Drain – Source
RDS(on) On Resistance
VGS = 10V
f = 1kHz
ID = 1A
Cds
Ciss
Coss
Crss
Drain – Source Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS = 24V
VGS = 0V
f = 1MHz
tON
Turn–On Time
tOFF
Turn–Off Time
* Pulse Test: tp £ 80 ms , d £ 1%
VDD = 25V
RL = 23W
ID = 1A
VGEN = 10V
RG = 25W
Typ.
70
1.6
1.8
1.8
1.3
2.6
0.54
1.3
2.6
350
1100
1.3
30
35
28
2
8
9
Max. Unit
V
2
±100
nA
±500
10
mA
500
A
5
1.8
W
3.6
1.5
1.8
V
3.6
ms
ms
1.8
W
40
50
pF
40
10
10
ns
10
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 4/00

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