D1868 データシートの表示（PDF） - Renesas Electronics

部品番号

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D1868

Silicon NPN Epitaxial

Renesas Electronics 

2SD1868, 2SD1869

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

2SA1868

2SA1869

Unit

160

200

V

160

200

V

5

5

V

100

100

mA

0.9

0.9

W

150

150

°C

–55 to +150

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit

Collector to base 2SD1868 V(BR)CBO 160 —

—

V

breakdown voltage

2SD1869

200

Collector to emitter 2SD1868 V(BR)CEO 160 —

—

V

breakdown voltage

2SD1869

200

Emitter to base breakdown

voltage

V(BR)EBO

5

—

—

V

Collector cutoff

current

2SD1868 ICBO

—

—

10

µA

2SD1869

DC current transfer ratio

hFE1*1

60

—

hFE2

30

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

320

—

1.5 V

2

V

Gain bandwidth product

fT

—

140 —

MHz

Collector output capacitance Cob

—

3.8

—

pF

Note: 1. The 2SD1868 and 2SD1869 are grouped by hFE1 as follows.

Grade

B

C

D

hFE1

60 to 120 100 to 200 160 to 320

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 140 V, IE = 0

VCB = 160 V, IE = 0

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 1 mA

VCE = 5 V, IC = 10 mA

IC = 30 mA, IB = 3 mA

VCE = 5 V, IC = 10 mA

VCB = 10 V, IE = 0, f = 1 MHz

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