2SD1876 データシートの表示（PDF） - SavantIC Semiconductor

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2SD1876

SILICON POWER TRANSISTOR

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1876

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VCEsat Collector-emitter saturation voltage IC=2A;IB=0.6A

VBEsat

Base-emitter saturation voltage

ICBO

Collector cut-off current

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=2A;IB=0.6A

VCB=800V; IE=0

VCB=1500V; RBE=0

VEB=4V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

VF

tf

DC current gain

Diode forward voltage

Fall time

IC=2A ; VCE=5V

IEC=3A

IC=3A;RL=66.7@

IB1=0.8A;IB2=-1.6A;VCC=200V

MIN TYP. MAX UNIT

800

V

5

V

1.5

V

10

µA

1.0

mA

40

130 mA

8

3

6

2.0

V

0.1

0.3

µs

2

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