KSA1015GRTA データシートの表示（PDF） - Fairchild Semiconductor

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KSA1015GRTA

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Max.

Unit

Total Device Dissipation

PD

Derate Above 25°C

400

mW

3.2

mW/°C

RθJA Thermal Resistance, Junction to Ambient

312

°C/W

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Cob

Output Capacitance

NF

Noise Figure

Conditions

IC = -100 μA, IE = 0

IC = -10 mA, IB = 0

IE = -10 μA, IC = 0

VCB = -50 V, IE = 0

VEB = -5 V, IC = 0

VCE = -6 V, IC = -2 mA

VCE = -6 V, IC = -150 mA

IC = -100 mA, IB = -10 mA

IC = -100 mA, IB = -10 mA

VCE = -10 V, IC = -1 mA

VCB = -10 V, IE = 0,

f = 1 MHz

VCE = -6 V, IC = -0.1 mA,

f = 100 Hz, RG = 10 kΩ

Min.

-50

-50

-5

70

25

80

Typ. Max.

-0.1

-0.1

400

-0.1 -0.3

-1.1

Unit

V

V

V

μA

μA

V

V

MHz

4

7

pF

0.5 6

dB

hFE Classification

Classification

hFE1

O

70 ~ 140

Y

120 ~ 240

GR

200 ~ 400

© 2002 Fairchild Semiconductor Corporation

KSA1015 Rev. 1.9

2

www.fairchildsemi.com

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