BAS21 データシートの表示（PDF） - Fairchild Semiconductor

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BAS21

General Purpose High Voltage Diode

Fairchild Semiconductor 

General Purpose High Voltage Diode

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

BV

IR

Parameter

Breakdown Voltage

Reverse Voltage Leakage Current

VF

Forward Voltage

CO

Diode Capacitance

TRR

Reverse Recovery Time

Test Conditions

IR = 100 µA

VR = 200 V

VR = 200 V, TA = 150 °C

IF = 100 mA

IF = 200 mA

VR = 0, f = 1.0 MHz

IF = IR = 30 mA, IRR = 3.0 mA,

RL = 100 Ω

Min

250

Max

100

100

1.0

1.25

5.0

50

Units

V

nA

µA

V

V

pF

nS

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