Q68000-A549 データシートの表示（PDF） - Siemens AG

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Q68000-A549

Silicon Switching Diode Array

Siemens AG 

BAV 99

Thermal Resistance

Junction - ambient2)

Junction - soldering point

Rth JA

Rth JS

≤ 500

K/W

≤ 360

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Breakdown voltage

I(BR) = 100 µA

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

Reverse current

VR = 70 V

VR = 25 V, TA = 150 ˚C

VR = 70 V, TA = 150 ˚C

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω

measured at IR = 1 mA

Symbol

Values

Unit

min. typ. max.

V(BR)

70

–

VF

–

–

–

–

–

–

–

–

IR

–

–

–

–

–

–

–

V

mV

715

855

1000

1250

µA

2.5

30

50

CD

–

–

1.5 pF

trr

–

–

6

ns

2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

2

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