BAW56 データシートの表示（PDF） - General Semiconductor

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BAW56

Small Signal Diodes

General Semiconductor 

BAW56

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 50 mA

at IF = 150 mA

VF

–

–

VF

–

–

VF

–

–

VF

–

–

Leakage Current

at VR = 70 V

at VR = 70 V, Tj = 150 °C

at VR = 25 V, Tj = 150 °C

IR

–

–

IR

–

–

IR

–

–

Capacitance

at VF = VR = 0, f = 1 MHz

Ctot

–

–

Reverse Recovery Time

from IF = 10 mA to IR = 10 mA

measured at IR = 1 mA, RL = 100 Ω

trr

–

–

Thermal Resistance

Junction to Ambient Air

RthJA

–

–

1) Device on fiberglass substrate, see layout

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

Max.

Unit

0.715

V

0.855

V

1.0

V

1.25

V

2.5

µA

100

µA

30

µA

2

pF

6

ns

4301)

K/W

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