BC108 データシートの表示（PDF） - Philips Electronics

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BC108

NPN general purpose transistors

Philips Electronics 

Philips Semiconductors

NPN general purpose transistors

Product specification

BC107; BC108; BC109

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-18; SOT18 metal package.

PNP complement: BC177.

PINNING

PIN

1

2

3

DESCRIPTION

emitter

base

collector, connected to the case

handbook, halfpa1ge

2

3

3

2

MAM264

1

Fig.1 Simplified outline (TO-18; SOT18)

and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

BC107

BC108; BC109

VCEO

collector-emitter voltage

BC107

BC108; BC109

ICM

peak collector current

Ptot

total power dissipation

hFE

DC current gain

BC107

BC108

BC109

fT

transition frequency

CONDITIONS

open emitter

open base

Tamb ≤ 25 °C

IC = 2 mA; VCE = 5 V

IC = 10 mA; VCE = 5 V; f = 100 MHz

MIN. MAX. UNIT

−

50

V

−

30

V

−

45

V

−

20

V

−

200

mA

−

300

mW

110

450

110

800

200

800

100

−

MHz

1997 Sep 03

2

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