BSS92 データシートの表示（PDF） - Vishay Semiconductors
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BSS92 Datasheet PDF : 4 Pages
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VP2020L, BSS92
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Drain-Source
Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Currentb
Drain-Source
On-Resistanceb
Forward
Transconductanceb
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = –10 mA
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –1 mA
VDS = 0 V, VGS = "20 V
TJ = 125_C
VDS = 0.8 x V(BR)DSS, VGS = 0 V
TJ = 125_C
VDS = –200 V, VGS = 0 V
TJ = 125_C
VDS = –60 V, VGS = 0 V
VDS = –10 V, VGS = –4.5 V
VGS = –10 V, ID = –0.1 A
VGS = –4.5 V, ID = –0.1 A
TJ = 125_C
VGS = –4.5 V, ID = –0.05 A
TJ = 125_C
VDS = –10 V, ID = –0.1 A
VDS = –25 V, ID = –0.1 A
IS = –0.3 A, VGS = 0 V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switchingc
VDS = –25 V, VGS = 0 V
f = 1 MHz
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = –25 V, RL = 250 W
ID ^ –0.1 A, VGEN = –10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Typa
–220
–1.9
–250
11.5
15
28
15
28
170
170
–0.9
30
10
3
6
8
18
17
Limits
VP2020L
BSS92
Min Max Min Max
Unit
–220
–0.8
–100
–2.5
"10
"50
–1
–100
20
40
–200
V
–0.8
–2.8
"100
nA
–60
mA
–200
–0.2
mA
20
W
100
70
20
10
10
15
30
25
mS
60
–1.2
V
130
30
pF
15
ns
VPDQ20
www.vishay.com
11-2
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
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