VP2020L, BSS92
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
–500
Output Characteristics for Low Gate Drive
–100
–400
–300
–200
VGS = –10 V
–6 V
–5 V
–4.5 V
–4 V
–80
VGS = –4 V
–3.6 V
–60
–40
–3 V
–100
–3 V
0
0
–100
–80
–1
–2
–3
–4
–5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
VDS = –15 V
25_C
–60
–40
–20
0
0
25
TJ = 125_C
–55_C
–1
–2
–3
–4
–5
VGS – Gate-Source Voltage (V)
On-Resistance
20
VGS = –4.5 V
15
10
–10 V
5
0
0
–50
–100
–150
–200
–250
VGS – Gate-Source Voltage (V)
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
–20
–2 V
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
18
16
14
ID = –0.1 A
12
10
–0.05 A
–0.02 A
8
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.25
2.00
VGS = –4.5 V
ID = –0.1 A
1.75
1.50
1.25
1.00
0.75
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
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