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BSS92 データシートの表示(PDF) - Vishay Semiconductors

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BSS92 Datasheet PDF : 4 Pages
1 2 3 4
VP2020L, BSS92
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10.0
Threshold Region
VDS = 5 V
120
VGS = 0 V
f = 1 MHz
100
Capacitance
1.0
80
TJ = 150_C
60
0.1
125_C
25_C
55_C
0.01
0
12
1.0
2.0
3.0 3.5
VGS Gate-to-Source Voltage (V)
Gate Charge
ID = 0.1 A
10
8
VDS = 100 V
6
160 V
4
40
Ciss
20
Coss
Crss
0
0
10
20
30
40
50
VDS Drain-to-Source Voltage (V)
Load Condition Effects on Switching
100
tf
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
td(off)
10
tr
td(on)
2
0
0
0.5
1.0
1.5
2.0
2.5
Qg Total Gate Charge (nC)
1
10
100
ID Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
1000
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
0.01
0.1
1.0
www.vishay.com
11-4
10
100
t1 Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM TA = PDMZthJA(t)
1K
10 K
Document Number: 70210
S-04279Rev. E, 16-Jun-01

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