BU1507AX データシートの表示（PDF） - Inchange Semiconductor
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BU1507AX Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4A; IB=0.8A
VCE=rated;VBE=0
Tj=125℃
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=4.0A ; VCE=5V
CC
Collector output capacitance
IE=0;f=1MHz;VCB=10V
Product Specification
BU1507AX
MIN TYP. MAX UNIT
7.5 13.5
V
700
V
5.0
V
1.1
V
1.0
2.0
mA
1.0 mA
17
5.0 7.0 9.0
68
pF
2
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