BUZ100SL-4 データシートの表示（PDF） - Siemens AG

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BUZ100SL-4

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

Siemens AG 

Preliminary data

BUZ 100SL-4

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TA = 25 °C

-

Inverse diode direct current, pulsed

ISM

TA = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 14.8 A

-

Reverse recovery time

trr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

-

-

0.9

75

0.21

A

7.4

29.6

V

1.6

ns

115

µC

0.315

Semiconductor Group

4

01/Oct/1997

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