Philips Semiconductors
Voltage regulator diodes
Product specification
BZX284 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
IF
continuous forward current
IZSM
non-repetitive peak reverse current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Tamb = 25 °C; note 1
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
ELECTRICAL CHARACTERISTICS
Total BZX284-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
BZX284-B/C2V4
BZX284-B/C2V7
BZX284-B/C3V0
BZX284-B/C3V3
BZX284-B/C3V6
BZX284-B/C3V9
BZX284-B/C4V3
BZX284-B/C4V7
BZX284-B/C5V1
BZX284-B/C5V6
BZX284-B/C6V2
BZX284-B/C6V8
BZX284-B/C7V5
BZX284-B/C8V2
BZX284-B/C9V1
BZX284-B/C10
BZX284-B/C11
BZX284-B/C12
BZX284-B/C13
BZX284-B/C15 to 75
CONDITIONS
IF = 10 mA; see Fig.4
IF = 100 mA; see Fig.4
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
MIN.
MAX.
−
250
see Tables 1 and 2
UNIT
mA
−
400 mW
−65 +150 °C
−
150 °C
MAX.
0.9
1.1
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
UNIT
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
1999 Apr 19
3