BZX85B データシートの表示（PDF） - Vishay Semiconductors

部品番号

コンポーネント説明

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BZX85B

Silicon Epitaxial Planar Z–Diodes

Vishay Semiconductors 

Silicon Epitaxial Planar Z–Diodes

Features

D Sharp edge in reverse characteristics

D Low reverse current

D Low noise

D Very high stability

BZX85B...

Vishay Telefunken

Applications

Voltage stabilization

94 9369

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Power dissipation

Junction temperature

l=4mm, TL=25°C

Storage temperature range

Type

Symbol Value Unit

PV

1.3

W

Tj

175

°C

Tstg –65...+175 °C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Junction ambient

l=4mm, TL=constant

Symbol

Value

Unit

RthJA

110

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

IF=200mA

Type

Symbol Min Typ Max Unit

VF

1V

Document Number 85607

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

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