FB180SA10 データシートの表示（PDF） - International Rectifier

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FB180SA10

HEXFET® Power MOSFET

International Rectifier 

FB180SA10

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

10

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

TJ = 150° C

100

TJ = 25 ° C

10

V DS = 25V

20µs PULSE WIDTH

1

4

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5 ID = 180A

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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