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FSQ110 データシートの表示(PDF) - Fairchild Semiconductor

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FSQ110
Fairchild
Fairchild Semiconductor Fairchild
FSQ110 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Pin Configuration
GND
D
VCC
D
8-DIP
FB
D
IPK
Vstr
FSQ110
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
1
Name
GND
2
VCC
3
FB
4
IPK
5
Vstr
6
D
7
D
8
D
Description
Ground. SenseFET source terminal on primary side and internal control ground.
Power Supply. Positive supply voltage input. Although connected to an auxiliary trans-
former winding, current is supplied from pin 5 (Vstr) via an internal switch during start-up
(see Figure 2). It is not until VCC reaches the UVLO upper threshold (12V) that the inter-
nal start-up switch opens and device power is supplied via the auxiliary transformer wind-
ing.
Feedback. The feedback voltage pin is the non-inverting input to the PWM comparator.
It has a 0.9mA current source connected internally, while a capacitor and opto-coupler
are typically connected externally. A feedback voltage of 6V triggers overload protection
(OLP). A time delay while charging external capacitor CFB from 3V to 6V using an internal
5µA current source delay prevents false triggering under transient conditions, but still al-
lows the protection mechanism to operate under true overload conditions.
Peak Current Limit. This pin adjusts the peak current limit of the SenseFET. The 0.9mA
feedback current source is diverted to the parallel combination of an internal 2.8kΩ resis-
tor and any external resistor to GND on this pin. This determines the peak current limit.
If this pin is tied to VCC or left floating, the typical peak current limit is 0.7A.
Start-up. This pin connects to the rectified AC line voltage source. At start-up, the internal
switch supplies internal bias and charges an external storage capacitor placed between
the VCC pin and ground. Once the VCC reaches 12V, the internal switch is opened.
SenseFET Drain. High-voltage power SenseFET drain connection.
SenseFET Drain. High-voltage power SenseFET drain connection.
SenseFET Drain. High-voltage power SenseFET drain connection.
© 2007 Fairchild Semiconductor Corporation
FSQ110 Rev. 1.0.0
3
www.fairchildsemi.com

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