FZT689B データシートの表示（PDF） - Diodes Incorporated.

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FZT689B

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

20

—

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

20

—

Emitter-Base Breakdown Voltage

Collector-Base Cut-Off Current

Emitter Cut-Off Current

BVEBO

7

—

ICBO

—

—

IEBO

—

—

DC Current Gain (Note 11)

500

—

hFE

400

—

150

—

—

—

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

—

—

—

Base-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

Input Capacitance

Output Capacitance

Current Gain-Bandwidth Product

Turn-On Time

Turn-Off Time

VBE(sat)

—

—

VBE(on)

—

—

Cibo

—

200

Cobo

—

16

fT

150

—

ton

—

30

toff

—

800

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

A Product Line of

Diodes Incorporated

FZT689B

5

Max

—

—

—

0.1

0.1

—

—

—

0.10

0.50

0.45

0.9

0.9

—

—

—

—

—

Unit

V

V

V

µA

µA

—

V

V

V

pF

pF

MHz

ns

ns

Test Condition

IC = 100µA

IC = 10mA

IE = 100µA

VCB = 16V

VEB = 5.6V

IC = 0.1A, VCE = 2V

IC = 2A, VCE = 2V

IC = 6A, VCE = 2V

IC = 0.1A, IB = 0.5mA

IC = 2A, IB = 10mA

IC = 3A, IB = 20mA

IC = 1A, IB = 10mA

IC = 1A, VCE = 2V

VEB = 0.5V, f = 1MHz

VCB = 10V, f = 1MHz

VCE = 5V, IC = 50mA, f=50MHz

VCC = 10V, IC = 500mA

IB1 = -IB2 = 50mA

FZT689B

Document number: DS33155 Rev. 4 - 2

4 of 7

www.diodes.com

May 2015

© Diodes Incorporated

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